The chemical vapor deposition of diamond is known to introduce complexes of silicon, vacancy, and hydrogen. We theoretically examined several such complexes, some of which have already been observed, others which could potentially form. Using hybrid density functional theory for the treatment of highly correlated orbitals, many measurable quantities are calculated. The SiV2H(-) negatively charged defect is found to be a promising candidate for a long lived solid state quantum memory. The study is highlighted as Editor's suggestion in PRB.
Phys. Rev. B 92 165203 (2015). DOI:10.1103/PhysRevB.92.165203
In collaboration with German (Jörg Wrachtrup group at Stuttgart University) and Swedish (Erik Janzén group at Linköping University) researchers, we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence times under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology. Our study is highlighted in a News and Views article from Nature Materials.
Nature Materials 14 164-168 (2015). DOI:10.1038/nmat4145