Semiconductor Nanostructures “Lendület” Research Group

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Introduction

Welcome to the Adam Gali group at Wigner Research Centre for Physics Our group’s research focuses on theoretical and experimental characterization of point defects in semiconductors and semiconductor nanostructures. We are developing and implementing new techniques for introducing dopants and defects in semiconductor (nano)structures, and studying their properties by experimental and theoretical spectroscopy tools.

We combine heat combustion, ion or neutron irradiation, colloid chemistry and related techniques to fabricate semiconductor nanostructures. Our focus is on silicon carbide to realize ultimate in vivo bioimaging agents. We are active in the field of computational materials science and has a large experience in using density functional theory (DFT) based methods in solids and nanostructures. The group leader started to apply advanced hybrid density functional theory methods on defects in bulk and nanostructured semiconductors already from 2002. From 2005 the GW method was also applied. Advanced time-dependent DFT (TDDFT) has been employed to determine the absorption spectrum of nanoclusters since 2008. These theories were utilized directly to defect engineering in bulk semiconductors and in their oxide interface, biomarkers, solid state quantum bits and spintronics, solar cells and related topics.


Projects

Publications: https://vm.mtmt.hu/search/slist.php?inited=1&co_on=&ty_on=1&la_on=&LanguageID=&abs_on=&sp_on=&st_on=&url_on=1&cite_type=2&orderby=3D1a&Scientific=1&Independent=&top10=&lang=1&location=mtmt&debug=&stn=1&AuthorID=10002866&DocumentID=&tipus=&besorolas=&jelleg=1Mtmt Publications Scholar.pngScholar Publications Scopus.pngScopus

Facilities & Support

People

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Group meeting in 2014 December
Group leader
Adam Gali
Postdoc fellows
Zoltán Bodrog
Jyh-Pin Chou
Viktor Ivády
Graduate students
Dávid Beke
Gyula Károlyházy
Bálint Somogyi
Gergő Thiering
Péter Udvarhelyi
András Csóré
Undergraduate students
Áron Dániel Major
Fanni Oláh
Balázs Juhász
Dániel Unyi
Ádám Pataki
Laboratory Assistants
István Balogh

Highlights

SiVHn.png

The chemical vapor deposition of diamond is known to introduce complexes of silicon, vacancy, and hydrogen. We theoretically examined several such complexes, some of which have already been observed, others which could potentially form. Using hybrid density functional theory for the treatment of highly correlated orbitals, many measurable quantities are calculated. The SiV2H(-) negatively charged defect is found to be a promising candidate for a long lived solid state quantum memory. The study is highlighted as Editor's suggestion in PRB.

Phys. Rev. B 92 165203 (2015). DOI:10.1103/PhysRevB.92.165203



Nmat.png

In collaboration with German (Jörg Wrachtrup group at Stuttgart University) and Swedish (Erik Janzén group at Linköping University) researchers, we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in ​SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence times under ambient conditions. Our study provides evidence that ​SiC is a promising system for atomic-scale spintronics and quantum technology. Our study is highlighted in a News and Views article from Nature Materials.

Nature Materials 14 164-168 (2015). DOI:10.1038/nmat4145


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