Our research group

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Group meeting in 2014 December

Our group’s research focuses on theoretical and experimental characterization of point defects in semiconductors and semiconductor nanostructures. We are developing and implementing new techniques for introducing dopants and defects in semiconductor (nano)structures, and studying their properties by experimental and theoretical spectroscopy tools.

We combine heat combustion, ion or neutron irradiation, colloid chemistry and related techniques to fabricate semiconductor nanostructures. Our focus is on silicon carbide to realize ultimate in vivo bioimaging agents. We are active in the field of computational materials science and has a large experience in using density functional theory (DFT) based methods in solids and nanostructures. The group leader started to apply advanced hybrid density functional theory methods on defects in bulk and nanostructured semiconductors already from 2002. From 2005 the GW method was also applied. Advanced time-dependent DFT (TDDFT) has been employed to determine the absorption spectrum of nanoclusters since 2008. These theories were utilized directly to defect engineering in bulk semiconductors and in their oxide interface, biomarkers, solid state quantum bits and spintronics, solar cells and related topics.


Group members

Group leader
Adam Gali
Postdoc fellows
Zoltán Bodrog
Jyh-Pin Chou
Viktor Ivády
Graduate students
Dávid Beke
Gyula Károlyházy
Bálint Somogyi
Gergő Thiering
Péter Udvarhelyi
András Csóré
Undergraduate students
Áron Dániel Major
Fanni Oláh
Balázs Juhász
Dániel Unyi
Ádám Pataki
Laboratory Assistants
István Balogh

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