BibManager: Overview

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Welcome to the overview page of the BibManager-Extension!
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Gali10 Gali, A.; G\"allstr\"om, A.; Son, N.T.; Janz\'en, E. (2010): Theory of Neutral Divacancy in SiC: A Defect for Spintronics. Mater. Sci. Forum, 645-648, 395-397
Gali2000 Gali, A.; Aradi, B.; De\'{a}k, P.; Choyke, W.; Son, N. (2000): Overcoordinated Hydrogens in the Carbon Vacancy: Donor Centers of SiC. Physical Review Letters, 84, 4926--4929
Gali2012-MSF Gali, A. (2012): Excitation Properties of Silicon Vacancy in Silicon Carbide. Mater. Sci. Forum, 717-720, 255-258
Gali2012-TDDFT Gali, A. (2012): Excitation spectrum of point defects in semiconductors studied by time-dependent density functional theory. J. Mater. Res., 27, 897-909
PhysRevB.87.205201 Iv\'ady, Viktor; Abrikosov, I. A.; Janz\'en, E.; Gali, A. (2013): Role of screening in the density functional applied to transition-metal defects in semiconductors. Phys. Rev. B, 87, 205201
PhysRevLett.106.157601 Waldherr, G.; Beck, J.; Steiner, M.; Neumann, P.; Gali, A.; Frauenheim, Th.; Jelezko, F.; Wrachtrup, J. (2011): Dark States of Single Nitrogen-Vacancy Centers in Diamond Unraveled by Single Shot NMR. Phys. Rev. Lett., 106, 157601
PhysRevLett.110.046804 Wippermann, S.; V\"or\"os, M.; Rocca, D.; Gali, A.; Zimanyi, G.; Galli, G. (2013): High-Pressure Core Structures of Si Nanoparticles for Solar Energy Conversion. Phys. Rev. Lett., 110, 046804
PhysRevLett.110.167402 Siyushev, P.; Pinto, H.; V\"or\"os, M.; Gali, A.; Jelezko, F.; Wrachtrup, J. (2013): Optically Controlled Switching of the Charge State of a Single Nitrogen-Vacancy Center in Diamond at Cryogenic Temperatures. Phys. Rev. Lett., 110, 167402
Son2006 Son, N.; Carlsson, P.; ul Hassan, J.; Janz\'{e}n, E.; Umeda, T.; Isoya, J.; Gali, A.; Bockstedte, M.; Morishita, N.; Ohshima, T.; Itoh, H. (2006): Divacancy in 4H-SiC. Physical Review Letters, 96, %pages%
Son2011 Son, N. T.; Gali, A.; Szabó, Á.; Bickermann, M.; Ohshima, T.; Isoya, J.; Janzén, E. (2011): Defects at nitrogen site in electron-irradiated AlN. Applied Physics Letters, 98, -
Szallas2014 Szállás, A.; Szász, K.; Trinh, X. T.; Son, N. T.; Janzén, E.; Gali, A. (2014): Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory. Journal of Applied Physics, 116, %pages%
Umeda2006 Umeda, T.; Son, N.; Isoya, J.; Janz\'{e}n, E.; Ohshima, T.; Morishita, N.; Itoh, H.; Gali, A.; Bockstedte, M. (2006): Identification of the Carbon Antisite-Vacancy Pair in 4H-SiC. Physical Review Letters, 96, %pages%