Our research group
Our group’s research focuses on theoretical and experimental characterization of point defects in semiconductors and semiconductor nanostructures. We are developing and implementing new techniques for introducing dopants and defects in semiconductor (nano)structures, and studying their properties by experimental and theoretical spectroscopy tools.
We combine heat combustion, ion or neutron irradiation, colloid chemistry and related techniques to fabricate semiconductor nanostructures. Our focus is on silicon carbide to realize ultimate in vivo bioimaging agents. We are active in the field of computational materials science and has a large experience in using density functional theory (DFT) based methods in solids and nanostructures. The group leader started to apply advanced hybrid density functional theory methods on defects in bulk and nanostructured semiconductors already from 2002. From 2005 the GW method was also applied. Advanced time-dependent DFT (TDDFT) has been employed to determine the absorption spectrum of nanoclusters since 2008. These theories were utilized directly to defect engineering in bulk semiconductors and in their oxide interface, biomarkers, solid state quantum bits and spintronics, solar cells and related topics.
Group members
- Group leader
- Adam Gali
- Postdoc fellows
- Zoltán Bodrog
- Dávid Beke
- Viktor Ivády
- Bálint Somogyi
- Emilie Bruyer
- Graduate students
- Gyula Károlyházy
- Gergő Thiering
- Péter Udvarhelyi
- András Csóré
- Undergraduate students
- Áron Dániel Major
- Fanni Oláh
- Balázs Juhász
- Dániel Unyi
- Ádám Pataki
- Laboratory Assistants
- Péter Rózsa
- István Balogh
- Dávid Veres
See also
People around (members, former members, partner colleagues)
